Strain Si- LT SiGe






Sigma etch improve SiGe strained Si perofrmance for 45nm
 
  • A new selective etch productintroduce sigma etchant etches an exposed silicon area, creating a well-defined "sigma" shape for epitaxy, removes post-etch residue and acts as a preclean
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  • The etchant under etches the “sigma” shape of the gate layer to improve electrical performance on advanced nodes by selectively etching doped silicon crystallographic planes <111> and <110>, without affecting the surrounding materials

  • Sigma tech was developed as a “self-cleaning” chemistry; no additional rinse is required for cleaning after the etch process. By creating well-defined crystallographic planes, it improves the lattice matching between the deposited SiGe and the existing silicon for better device performance
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    SiGe sigma etch profile

    Last updated: 12/29/2011