Strain Si- SiGe facet
LT SiGe
eSiGe quality
SiGe Loading effect
SiGe Sigma etch for strained Si
High Ge critical thickness
SiGe facet
Semiconductor
SiGe facet
The SiGe growth can result in facet form under specific process. The main parameters in forming facet epi are silance source, HCl flow & pressureduring epi growth.
With facet epi morphology can reduce the parastic capacitance in device.
Last updated: 01/04/2012